Infineon SiC 产品线概览

CoolSiC™ – Revolution to rely on
SiC solutions enabling radical new product designs with best system cost-performance ratio

SiC器件特性和优势

• The combination of a fast silicon based switch with a SiC diode – is oft en termed a “hybrid” solution.
• 用SiC器件的变换器，体积可以降低到1/3，重量可以降低到原来的25%
• Low device capacitances
• Temperature independent switching losses（如何理解不受温度影响的开关损耗）
• Intrinsic diode with low reverse recovery charge
• Threshold-free on-state characteristics
• Superior gate oxide reliability
• Best in class switching and conduction losses
• IGBT compatible driving (+15 V)
• Threshold voltage, $V_{th}$ > 4 V
• Short-circuit robustness
• Highest efficiency for reduced cooling effort
• The products portfolio will be extended within the next years. The first step is a roll-out of different topologies like Sixpack and Halfbridge covering a power range from 2kW until 200kW. 产品组合将在未来几年内扩展。 第一步是推出各种拓扑，例如Sixpack和Halfbridge，覆盖从2kW到200kW的功率范围。

现有MOSFET产品

SiC MOSFET 单管和模块

注意封装的命名对应关系
TO-xxx : TO — transistor outline

驱动芯片产品

命名规则

• 单管
  
• 模块
  

SiC Schottky diodes G5

SiC材料对于Schottky 二极管的性能提升是巨大的。传统的基于Si材料的schottky二极管耐压只能达到100~150V，这一点可以从infineon的官网产品中看出，其最高耐压等级为70V。而用碳化硅材料的肖特基二极管耐压等级可以到1700V，天差地别。
肖特基二极管有什么好处呢？fast switching

• No reverse recovery charge
• Low turn-off loss
• Purely capacitive switching
• High operating temperature
• Reduction of CoolMOS™ or IGBT turn-on loss
• Switching loss independent from load current, switching speed and temperature

结构

命名规则

产品线

Hybrid产品线