MOS tube model: HG160N10L
MOS tube parameters: 100V 8A
low internal resistance: 110mR (VGS=10V)
low junction capacitance: 201pF
Type: SGT process NMOS
low turn-on voltage: 1.7V
package: TO-252
100vmos tube technology solution sharing
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Origin blog.csdn.net/IC_Mos/article/details/110802940
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