开关电源关键元件的各个参数中英文对照表!(转)

转载“与非网”网友fightingboon的文章,原文章链接为开关电源关键元件的各个参数中英文对照表!

肖特基二极管

Symbol
Parameter
中文翻译
VRRM
Peak repetitive reverse voltage
反向重复峰值电压
VRWM
Working peak reverse  voltage
反向工作峰值电压
VR
DC Blocking Voltage
反向直流电压
VR(RMS)
RMS Reverse Voltage
反向电压有效值
IF(AV)
Average Rectified Forward Current
正向平均电流
IR
Reverse Current
反向电流
IFSM
Non-Repetitive Peak  Forward Surge Current
浪涌电流
VF
Forward Voltage
正向直流电压
Cj
Typical Junction Capactiance
结电容
PD
Power Dissipation
耗散功率
Tj
Operating Junction Temperature
工作结温
Tstg
Storage Temperature Range
存储温度
Rth(j-a)
Thermal Resistance from Junction to Ambient
结到环境的热阻

二极管

Symbol
Parameter
中文翻译
VR
Continuous reverse voltage
反向直流电压
IF
Continuous forward current
正向直流电流
VF
Forward voltage
正向电压
IR
Reverse current
反向电流
Cd
diode capacitance
二极管电容
Rd
diode forward resistance
二极管正向电阻
Ptot
total power dissipation
功率总损耗
Tj
Junction Temperature
结温
Tstg
storage temperature
存储温度



TVS管

Symbol
Parameter
                                       
翻译
IPP
Maximum reverse peak pulse current
峰值脉冲电流
VC
Clampling voltage
钳位电压
IR
Maximum reverse leakage current
最大反向漏电流
V(BR)
Breakdown voltage
击穿电压
VRWM
Working peak reverse voltage
反向工作峰值电压
VF
Forward voltage
正向电压
IF
Forward current
正向电流
IT
Test current
测试电流
可控硅
Symbol
Parameter
中文翻译
VDRM
Peak repetitive off-state voltage
断态重复峰值电压
VRRM
Peak repetitive reverse voltage
反向重复峰值电压
IT(RMS)
RMS On-state current
额定通态电流
ITSM
Non repetitive surge peak on-state current
通态非重复浪涌电流
IGM
Forward peak gate current
控制极重复峰值电流
VTM
peak forward on-state voltage
通态峰值电压
IGT
Gate trigger current
控制极触发直流电流
VGT
Gate trigger voltage
控制极触发电压
IH
Holding current
维持电流
IDRM
Peak repetitive off-state  current
断态重复峰值电流
IRRM
Peak repetitive reverse current
反向重复峰值电流
PG(AV)
Average gate power dissipation
控制极平均功率
Tj
operating junction temperature range
工作结温
Tstg
storage temperature range
存储温度

稳压管

Symbol
Parameter
中文翻译
VI
input voltage
输入电压
Vo
output voltage
输出电压
ΔVo
Load regulation
输出调整率
ΔVo
Line regulation
输入调整率
Iq
quiescent current
偏置电流
ΔIq
quiescent current change
偏置电流变化量
VN
Output noise voltage
输出噪声电压
RR
Ripple rejection
纹波抑制比
Vd
dropout voltage
降落电压
Isc
short circuit current
短路输出电流
Ipk
peak current
峰值输出电流
Topr
operating junction temperature range
结温
Tstg
storage temperature range
存储温度
43系列基准源
Symbol Parameter 中文翻译
VKA Cathode voltage 阴极电压
IK Cathode current range(continous) 阴极电流
Iref Reference input current range,continous 基准输入电流
PD Power dissipation 耗散功率
Rth(j-a) Thermal resistance from junction to ambient 结到环境的热阻
Topr operating junction temperature range 工作结温
Tstg storage temperature range 存储温度
Vref Reference input voltage 基准输入电压
ΔVref(dev) Deviation of reference input voltage over full temperature range 全温度范围内基准输入电压的偏差
ΔVref/ΔVKA Ratio of change in reference input voltage to the change in cathode voltage 基准输入电压变化量与阴极电压变化量的比
ΔIref(dev) Deviation of reference input current over full temperature range 全温度范围内基准输入电流的偏差
Imin Minimum cathode current for regulation 稳压时最小负极电流
Ioff off-state cathode current 关断状态阴极电流
|ZKA| Dynamic impedance 动态阻抗
普通晶体管
Symbol
Parameter
中文翻译
VCBO
Collector-Base voltage
发射极开路,集电极-基极电压
VCEO
Collector-emitter voltage
基极开路,集电极-发射极电压
VEBO
Emitter-base voltage
集电极开路,发射极-基极电压
IC
Collector current
集电极电流
PC
Collector power dissipation
集电极耗散功率
Tj
Junction temperature
结温
Tstg
storage temperature
存储温度
V(BR)CBO
Collector-Base breakdown voltage
发射极开路,集电极-基极反向电压
V(BR)CEO
Collector-emitter breakdown voltage
基极开路,集电极-发射极反向电压
V(BR)EBO
Emitter-base breakdown voltage
集电极开路,发射极-基极反向电压
ICBO
Collector cut-off current
发射极开路,集电极-基极截止电流
IEBO
Emitter cut-off current
集电极开路,发射极-基极截止电流
ICEO
Collector cut-off current
基极开路,集电极-发射极截止电流
hFE
DC current gain
共发射极正向电流传输比的静态值
VCEsat
Collector-emitter saturation voltage
集电极-发射极饱和电压
VBEsat
Base-emitter saturation voltage
基极-发射极饱和电压
VBE
Base-emitter voltage
基极-发射极电压
fT
Transition frequency
特征频率
Cobo
Collector output capacitance
共基极输出电容
Cibo
Collector input capacitance
共基极输入电容
F
Noise figure
噪声系数
Ton
Turn-on time
开通时间
Toff
Turn-off time
关断时间
Tr
Rise time
上升时间
Ts
Storage time
存储时间
Tf
Fall time
下降时间
Td
Delay time
延迟时间
MOS管
Symbol
Parameter
中文翻译
ID
Continuous drain current
漏极直流电流
VGS
Gate-source voltage
栅-源电压
VDS
Drain-source voltage
漏-源电压
EAS
single pulse avalchane energy
单脉冲雪崩击穿能量
Rth(j-a)
Thermal resistance from junction to ambient
结到环境的热阻
Rth(j-c)
Thermal resistance from junction to case
结到管壳的热阻
V(BR)DSS
Drain-source breakdown voltage
漏源击穿电压
V(GS)th
Gate threshold voltage
栅源阈值电压
IGSS
Gate-body leakage current
漏-源短路的栅极电流
IDSS
Zero gate voltage drain current
栅-源短路的漏极电流
rDS(on)
Drain-source on-resistance
漏源通态电阻
gfs
Forward trans  conductance
跨导
VSD
Diode forward voltage
漏源间体内反并联二极管正向压降
Ciss
Input capacitance
栅-源电容
Coss
Output capacitance
漏-源电容
Crss
Reverse transfer capacitance
反向传输电容
Rg
Gate resistance
栅极电阻
td(on)
Turn-on delay time
开通延迟时间
tr
Rise time
上升时间
td(off)
Turn-off delay time
关断延迟时间
tf
Fall time
下降时间
IDM
Pulsed drain current
最大脉冲漏电流
PD
Power dissipation
耗散功率
Tj
operating junction temperature range
结温
Tstg
storage temperature range
存储温度

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转载自blog.csdn.net/feiliantong/article/details/83988078