转载“与非网”网友fightingboon的文章,原文章链接为开关电源关键元件的各个参数中英文对照表!
肖特基二极管
Symbol |
Parameter
|
中文翻译
|
VRRM |
Peak repetitive reverse voltage
|
反向重复峰值电压
|
VRWM |
Working peak reverse voltage
|
反向工作峰值电压
|
VR |
DC Blocking Voltage
|
反向直流电压
|
VR(RMS) |
RMS Reverse Voltage
|
反向电压有效值
|
IF(AV) |
Average Rectified Forward Current
|
正向平均电流
|
IR |
Reverse Current
|
反向电流
|
IFSM |
Non-Repetitive Peak Forward Surge Current
|
浪涌电流
|
VF |
Forward Voltage
|
正向直流电压
|
Cj |
Typical Junction Capactiance
|
结电容
|
PD |
Power Dissipation
|
耗散功率
|
Tj |
Operating Junction Temperature
|
工作结温
|
Tstg |
Storage Temperature Range
|
存储温度
|
Rth(j-a) |
Thermal Resistance from Junction to Ambient
|
结到环境的热阻
|
二极管
Symbol |
Parameter
|
中文翻译
|
VR |
Continuous reverse voltage
|
反向直流电压
|
IF |
Continuous forward current
|
正向直流电流
|
VF |
Forward voltage
|
正向电压
|
IR |
Reverse current
|
反向电流
|
Cd |
diode capacitance
|
二极管电容
|
Rd |
diode forward resistance
|
二极管正向电阻
|
Ptot |
total power dissipation
|
功率总损耗
|
Tj |
Junction Temperature
|
结温
|
Tstg |
storage temperature
|
存储温度
|
TVS管
Symbol |
Parameter
|
中
文 翻译 |
IPP |
Maximum reverse peak pulse current
|
峰值脉冲电流
|
VC |
Clampling voltage
|
钳位电压
|
IR |
Maximum reverse leakage current
|
最大反向漏电流
|
V(BR) |
Breakdown voltage
|
击穿电压
|
VRWM |
Working peak reverse voltage
|
反向工作峰值电压
|
VF |
Forward voltage
|
正向电压
|
IF |
Forward current
|
正向电流
|
IT |
Test current
|
测试电流
|
可控硅
Symbol Parameter 中文翻译VDRM Peak repetitive off-state voltage 断态重复峰值电压VRRM Peak repetitive reverse voltage 反向重复峰值电压IT(RMS) RMS On-state current 额定通态电流ITSM Non repetitive surge peak on-state current 通态非重复浪涌电流IGM Forward peak gate current 控制极重复峰值电流VTM peak forward on-state voltage 通态峰值电压IGT Gate trigger current 控制极触发直流电流VGT Gate trigger voltage 控制极触发电压IH Holding current 维持电流IDRM Peak repetitive off-state current 断态重复峰值电流IRRM Peak repetitive reverse current 反向重复峰值电流PG(AV) Average gate power dissipation 控制极平均功率Tj operating junction temperature range 工作结温Tstg storage temperature range 存储温度
稳压管
Symbol Parameter 中文翻译VI input voltage 输入电压Vo output voltage 输出电压ΔVo Load regulation 输出调整率ΔVo Line regulation 输入调整率Iq quiescent current 偏置电流ΔIq quiescent current change 偏置电流变化量VN Output noise voltage 输出噪声电压RR Ripple rejection 纹波抑制比Vd dropout voltage 降落电压Isc short circuit current 短路输出电流Ipk peak current 峰值输出电流Topr operating junction temperature range 结温Tstg storage temperature range 存储温度
43系列基准源
Symbol Parameter 中文翻译 VKA Cathode voltage 阴极电压 IK Cathode current range(continous) 阴极电流 Iref Reference input current range,continous 基准输入电流 PD Power dissipation 耗散功率 Rth(j-a) Thermal resistance from junction to ambient 结到环境的热阻 Topr operating junction temperature range 工作结温 Tstg storage temperature range 存储温度 Vref Reference input voltage 基准输入电压 ΔVref(dev) Deviation of reference input voltage over full temperature range 全温度范围内基准输入电压的偏差 ΔVref/ΔVKA Ratio of change in reference input voltage to the change in cathode voltage 基准输入电压变化量与阴极电压变化量的比 ΔIref(dev) Deviation of reference input current over full temperature range 全温度范围内基准输入电流的偏差 Imin Minimum cathode current for regulation 稳压时最小负极电流 Ioff off-state cathode current 关断状态阴极电流 |ZKA| Dynamic impedance 动态阻抗
普通晶体管
Symbol Parameter 中文翻译VCBO Collector-Base voltage 发射极开路,集电极-基极电压VCEO Collector-emitter voltage 基极开路,集电极-发射极电压VEBO Emitter-base voltage 集电极开路,发射极-基极电压IC Collector current 集电极电流PC Collector power dissipation 集电极耗散功率Tj Junction temperature 结温Tstg storage temperature 存储温度V(BR)CBO Collector-Base breakdown voltage 发射极开路,集电极-基极反向电压V(BR)CEO Collector-emitter breakdown voltage 基极开路,集电极-发射极反向电压V(BR)EBO Emitter-base breakdown voltage 集电极开路,发射极-基极反向电压ICBO Collector cut-off current 发射极开路,集电极-基极截止电流IEBO Emitter cut-off current 集电极开路,发射极-基极截止电流ICEO Collector cut-off current 基极开路,集电极-发射极截止电流hFE DC current gain 共发射极正向电流传输比的静态值VCEsat Collector-emitter saturation voltage 集电极-发射极饱和电压VBEsat Base-emitter saturation voltage 基极-发射极饱和电压VBE Base-emitter voltage 基极-发射极电压fT Transition frequency 特征频率Cobo Collector output capacitance 共基极输出电容Cibo Collector input capacitance 共基极输入电容F Noise figure 噪声系数Ton Turn-on time 开通时间Toff Turn-off time 关断时间Tr Rise time 上升时间Ts Storage time 存储时间Tf Fall time 下降时间Td Delay time 延迟时间
MOS管
Symbol Parameter 中文翻译ID Continuous drain current 漏极直流电流VGS Gate-source voltage 栅-源电压VDS Drain-source voltage 漏-源电压EAS single pulse avalchane energy 单脉冲雪崩击穿能量Rth(j-a) Thermal resistance from junction to ambient 结到环境的热阻Rth(j-c) Thermal resistance from junction to case 结到管壳的热阻V(BR)DSS Drain-source breakdown voltage 漏源击穿电压V(GS)th Gate threshold voltage 栅源阈值电压IGSS Gate-body leakage current 漏-源短路的栅极电流IDSS Zero gate voltage drain current 栅-源短路的漏极电流rDS(on) Drain-source on-resistance 漏源通态电阻gfs Forward trans conductance 跨导VSD Diode forward voltage 漏源间体内反并联二极管正向压降Ciss Input capacitance 栅-源电容Coss Output capacitance 漏-源电容Crss Reverse transfer capacitance 反向传输电容Rg Gate resistance 栅极电阻td(on) Turn-on delay time 开通延迟时间tr Rise time 上升时间td(off) Turn-off delay time 关断延迟时间tf Fall time 下降时间IDM Pulsed drain current 最大脉冲漏电流PD Power dissipation 耗散功率Tj operating junction temperature range 结温Tstg storage temperature range 存储温度